![]() ![]() The base region is extremely thin, or less. The thin central section is called the base whereas and end sections constitute the emitter and the collector. Thus, there get formed a very thin layer of n-type semiconductor sandwiched between p-type materials on either side. Later on, the type of impurity is changed to n-type by adding to the melt, n-type impurity in sufficient large quantity and after a very small-time interval, again the impurity is changed to p-type by adding sufficient p-type impurity. Such a transistor is formed by first growing a Ge (or Si) crystal of p-type from a melt of Ge (or Si). Grown Junction Transistor | Types of Transistor on the Method of Constructionįigure 1 and 2 show respectively the three- and two-dimensional views of basic grown junction PNP transistor. Alloy type of Fused Junction Transistors.Type of Transistors: Depending on the method of construction transistors may be classified in following five categories: Types of Transistor on the Method of Construction An NPN transistor, on the other hand, consists of a silicon (or germanium) crystal in which a thin layer of p-type silicon is sandwiched between two layers of n-type silicon. ![]() A PNP transistor consists of a crystal of silicon (or germanium) in which a thin layer of n-type silicon is sandwiched between two layers of p-type silicon. A junction transistor may be of PNP type or NPN type and may be made of germanium or silicon.
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